- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,996
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 11A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 125W (Tc) | N-Channel | 600V | 11A (Tc) | 380 mOhm @ 5.5A, 10V | 4V @ 250µA | 20.5nC @ 10V | 1040pF @ 100V | 10V | ±30V | |||
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858
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 700V 11A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 125W (Tc) | N-Channel | 700V | 11A (Tc) | 380 mOhm @ 3.3A, 10V | 4V @ 250µA | 18.8nC @ 10V | 981pF @ 100V | 10V | ±30V | |||
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VIEW |
706
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 60V 11A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 25W (Tc) | N-Channel | 60V | 11A (Tc) | 90 mOhm @ 6A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | 500pF @ 15V | 4.5V, 10V | ±20V | |||
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1,521
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 60V 11A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 25W (Tc) | N-Channel | 60V | 11A (Tc) | 90 mOhm @ 6A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | 500pF @ 15V | 4.5V, 10V | ±20V | |||
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3,412
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 20V 11A 8SOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 2.5W (Tc) | P-Channel | 20V | 11A (Tc) | 16 mOhm @ 6A, 4.5V | 1V @ 250µA | 27nC @ 4.5V | 2320pF @ 15V | 1.8V, 4.5V | ±10V | |||
