Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM3443CX6 RFG
RFQ
VIEW
RFQ
3,623
In-stock
Taiwan Semiconductor Corporation MOSFET P-CHANNEL 20V 4.7A SOT26 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-26 2W (Ta) P-Channel 20V 4.7A (Ta) 60 mOhm @ 4.7A, 4.5V 1.4V @ 250µA 9nC @ 4.5V 640pF @ 10V 2.5V, 4.5V ±12V
TSM3457CX6 RFG
RFQ
VIEW
RFQ
3,790
In-stock
Taiwan Semiconductor Corporation MOSFET P-CHANNEL 30V 5A SOT26 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-26 2W (Ta) P-Channel 30V 5A (Ta) 60 mOhm @ 5A, 10V 3V @ 250µA 27nC @ 10V 551.57pF @ 15V 4.5V, 10V ±20V
TSM3446CX6 RKG
RFQ
VIEW
RFQ
792
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 20V 5.3A SOT26 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-26 2W (Ta) N-Channel 20V 5.3A (Tc) 33 mOhm @ 5.3A, 4.5V 1V @ 250µA 8.8nC @ 4.5V 700pF @ 10V 2.5V, 4.5V ±12V
TSM4806CS RLG
RFQ
VIEW
RFQ
656
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 20V 28A 8SOP - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 2W (Ta) N-Channel 20V 28A (Ta) 20 mOhm @ 20A, 4.5V 1V @ 250µA 12.3nC @ 4.5V 961pF @ 15V 1.8V, 4.5V ±8V