Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TSM2301ACX RFG
RFQ
VIEW
RFQ
2,607
In-stock
Taiwan Semiconductor Corporation MOSFET P-CHANNEL 20V 2.8A SOT23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 700mW (Ta) P-Channel 20V 2.8A (Tc) 130 mOhm @ 2.8A, 4.5V 1V @ 250µA 4.5nC @ 4.5V 480pF @ 15V 2.5V, 4.5V ±12V
TSM2303CX RFG
RFQ
VIEW
RFQ
890
In-stock
Taiwan Semiconductor Corporation MOSFET P-CHANNEL 30V 1.3A SOT23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 700mW (Ta) P-Channel 30V 1.3A (Ta) 180 mOhm @ 1.3A, 10V 3V @ 250µA 3.2nC @ 4.5V 565pF @ 10V 4.5V, 10V ±20V