Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STP50NE10
RFQ
VIEW
RFQ
2,064
In-stock
STMicroelectronics MOSFET N-CH 100V 50A TO-220 STripFET™ Obsolete Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 TO-220AB 180W (Tc) N-Channel - 100V 50A (Tc) 27 mOhm @ 25A, 10V 4V @ 250µA 166nC @ 10V 6000pF @ 25V 10V ±20V
STW60NE10
RFQ
VIEW
RFQ
3,569
In-stock
STMicroelectronics MOSFET N-CH 100V 60A TO-247 STripFET™ Obsolete Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-247-3 TO-247-3 180W (Tc) N-Channel - 100V 60A (Tc) 22 mOhm @ 30A, 10V 4V @ 250µA 185nC @ 10V 5300pF @ 25V 10V ±20V
IRFP250
RFQ
VIEW
RFQ
662
In-stock
STMicroelectronics MOSFET N-CH 200V 33A TO-247 PowerMESH™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 180W (Tc) N-Channel - 200V 33A (Tc) 85 mOhm @ 16A, 10V 4V @ 250µA 158nC @ 10V 2850pF @ 25V 10V ±20V
STB50NE10T4
RFQ
VIEW
RFQ
2,064
In-stock
STMicroelectronics MOSFET N-CH 100V 50A D2PAK STripFET™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -65°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 180W (Tc) N-Channel - 100V 50A (Tc) 27 mOhm @ 25A, 10V 4V @ 250µA 166nC @ 10V 6000pF @ 25V 10V ±20V