- Series :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,312
In-stock
|
STMicroelectronics | MOSFET N-CH 620V 5.5A IPAK | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 90W (Tc) | N-Channel | - | 620V | 5.5A (Tc) | 1.2 Ohm @ 2.8A, 10V | 4.5V @ 50µA | 30nC @ 10V | 875pF @ 50V | 10V | ±30V | |||
|
|
VIEW |
2,317
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 5.5A IPAK | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 650V | 5.5A (Tc) | 820 mOhm @ 2.5A, 10V | 4V @ 250µA | 11.5nC @ 10V | 325pF @ 100V | 10V | ±25V | |||
