Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STD12N50M2
RFQ
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RFQ
1,222
In-stock
STMicroelectronics MOSFET N-CH 500V 10A DPAK MDmesh™ M2 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 85W (Tc) N-Channel - 500V 10A (Tc) 380 mOhm @ 5A, 10V 4V @ 250µA 15nC @ 10V 550pF @ 100V 10V ±30V
STD3NK50ZT4
RFQ
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RFQ
2,722
In-stock
STMicroelectronics MOSFET N-CH 500V 2.3A DPAK SuperMESH™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 45W (Tc) N-Channel - 500V 2.3A (Tc) 3.3 Ohm @ 1.15A, 10V 4.5V @ 50µA 15nC @ 10V 280pF @ 25V 10V ±30V
STQ2HNK60ZR-AP
RFQ
VIEW
RFQ
2,954
In-stock
STMicroelectronics MOSFET N-CH 600V 0.5A TO-92 SuperMESH™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 3W (Tc) N-Channel - 600V 500mA (Tc) 4.8 Ohm @ 1A, 10V 4.5V @ 50µA 15nC @ 10V 280pF @ 25V 10V ±30V
STD10N60DM2
RFQ
VIEW
RFQ
1,937
In-stock
STMicroelectronics N-CHANNEL 600 V, 0.26 OHM TYP., MDmesh™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 109W (Tc) N-Channel - 650V 8A (Tc) 530 mOhm @ 4A, 10V 5V @ 250µA 15nC @ 10V 529pF @ 100V 10V ±25V
STD2HNK60Z
RFQ
VIEW
RFQ
2,553
In-stock
STMicroelectronics MOSFET N-CH 600V 2A DPAK SuperMESH™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 45W (Tc) N-Channel - 600V 2A (Tc) 4.8 Ohm @ 1A, 10V 4.5V @ 50µA 15nC @ 10V 280pF @ 25V 10V ±30V