Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
RS1E240BNTB
RFQ
VIEW
RFQ
3,390
In-stock
Rohm Semiconductor MOSFET N-CH 30V 24A 8HSOP - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerTDFN 8-HSOP 3W (Ta), 30W (Tc) N-Channel 30V 24A (Ta) 3.2 mOhm @ 24A, 10V 2.5V @ 1mA 70nC @ 10V 3900pF @ 15V 4.5V, 10V ±20V
R6024ENJTL
RFQ
VIEW
RFQ
2,619
In-stock
Rohm Semiconductor MOSFET N-CH 600V 24A LPT - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB LPTS (D2PAK) 40W (Tc) N-Channel 600V 24A (Tc) 165 mOhm @ 11.3A, 10V 4V @ 1mA 70nC @ 10V 1650pF @ 25V 10V ±20V