- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,834
In-stock
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Renesas Electronics America | MOSFET N-CHANNEL 200V 20A WPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | WPAK(3F) (5x6) | 65W (Ta) | N-Channel | 200V | 20A (Ta) | 69 mOhm @ 10A, 10V | 38nC @ 10V | 2200pF @ 25V | 10V | ±30V | |||
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VIEW |
1,869
In-stock
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Renesas Electronics America | MOSFET N-CH 200V 20A WPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | WPAK(3F) (5x6) | 65W (Tc) | N-Channel | 200V | 20A (Ta) | 85 mOhm @ 10A, 10V | 19nC @ 10V | 1200pF @ 25V | 10V | ±30V |