Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FCH099N60E
RFQ
VIEW
RFQ
2,964
In-stock
ON Semiconductor MOSFET N-CH 600V TO247 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 357W (Tc) N-Channel 600V 37A (Tc) 99 mOhm @ 18.5A, 10V 3.5V @ 250µA 114nC @ 10V 3465pF @ 380V 10V ±20V
FCP099N60E
RFQ
VIEW
RFQ
3,980
In-stock
ON Semiconductor MOSFET N-CH 600V TO220 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 357W (Tc) N-Channel 600V 37A (Tc) 99 mOhm @ 18.5A, 10V 3.5V @ 250µA 114nC @ 10V 3465pF @ 380V 10V ±20V
NDUL09N150CG
RFQ
VIEW
RFQ
1,628
In-stock
ON Semiconductor MOSFET N-CH 1500V 9A TO3PF-3 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) - TO-3P-3 Full Pack TO-3PF-3 3W (Ta), 78W (Tc) N-Channel 1500V 9A (Ta) 3 Ohm @ 3A, 10V 4V @ 1mA 114nC @ 10V 2025pF @ 30V 10V ±30V