Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQPF3N80CYDTU
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3,228
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ON Semiconductor MOSFET N-CH 800V 3A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Formed Leads TO-220F-3 (Y-Forming) 39W (Tc) N-Channel 800V 3A (Tc) 4.8 Ohm @ 1.5A, 10V 5V @ 250µA 16.5nC @ 10V 705pF @ 25V 10V ±30V
FQPF3N80C
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RFQ
2,252
In-stock
ON Semiconductor MOSFET N-CH 800V 3A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 39W (Tc) N-Channel 800V 3A (Tc) 4.8 Ohm @ 1.5A, 10V 5V @ 250µA 16.5nC @ 10V 705pF @ 25V 10V ±30V
FQP3N80C
RFQ
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RFQ
2,306
In-stock
ON Semiconductor MOSFET N-CH 800V 3A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 107W (Tc) N-Channel 800V 3A (Tc) 4.8 Ohm @ 1.5A, 10V 5V @ 250µA 16.5nC @ 10V 705pF @ 25V 10V ±30V
NTD4979N-35G
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RFQ
3,992
In-stock
ON Semiconductor MOSFET N-CH 30V 9.4A IPAK TRIMME - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 1.38W (Ta), 26.3W (Tc) N-Channel 30V 9.4A (Ta), 41A (Tc) 9 mOhm @ 30A, 10V 2.5V @ 250µA 16.5nC @ 10V 837pF @ 15V 4.5V, 10V ±20V