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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	FQI6N60CTU	RFQ VIEW	PDF RFQ	3,591 In-stock	ON Semiconductor	MOSFET N-CH 600V 5.5A I2PAK		QFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK (TO-262)	125W (Tc)	N-Channel	-	600V	5.5A (Tc)	2 Ohm @ 2.75A, 10V	4V @ 250µA	20nC @ 10V	810pF @ 25V	10V	±30V
	FQPF6N60C	RFQ VIEW	PDF RFQ	2,458 In-stock	ON Semiconductor	MOSFET N-CH 600V 5.5A TO-220F		QFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F	40W (Tc)	N-Channel	-	600V	5.5A (Tc)	2 Ohm @ 2.75A, 10V	4V @ 250µA	20nC @ 10V	810pF @ 25V	10V	±30V
	FQP6N60C_F080	RFQ VIEW	PDF RFQ	3,507 In-stock	ON Semiconductor	MOSFET N-CH 600V 5.5A TO-220		QFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3	125W (Tc)	N-Channel	-	600V	5.5A (Tc)	2 Ohm @ 2.75A, 10V	4V @ 250µA	20nC @ 10V	810pF @ 25V	10V	±30V
	FQP6N60C	RFQ VIEW	PDF RFQ	2,999 In-stock	ON Semiconductor	MOSFET N-CH 600V 5.5A TO-220		QFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3	125W (Tc)	N-Channel	-	600V	5.5A (Tc)	2 Ohm @ 2.75A, 10V	4V @ 250µA	20nC @ 10V	810pF @ 25V	10V	±30V

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