Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQP4N90
RFQ
VIEW
RFQ
3,646
In-stock
ON Semiconductor MOSFET N-CH 900V 4.2A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 140W (Tc) N-Channel - 900V 4.2A (Tc) 3.3 Ohm @ 2.1A, 10V 5V @ 250µA 30nC @ 10V 1100pF @ 25V 10V ±30V
FQPF6P25
RFQ
VIEW
RFQ
2,696
In-stock
ON Semiconductor MOSFET P-CH 250V 4.2A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 45W (Tc) P-Channel - 250V 4.2A (Tc) 1.1 Ohm @ 2.1A, 10V 5V @ 250µA 27nC @ 10V 780pF @ 25V 10V ±30V
FQPF5N15
RFQ
VIEW
RFQ
3,941
In-stock
ON Semiconductor MOSFET N-CH 150V 4.2A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 32W (Tc) N-Channel - 150V 4.2A (Tc) 800 mOhm @ 2.1A, 10V 4V @ 250µA 7nC @ 10V 230pF @ 25V 10V ±25V
FDPF5N50NZF
RFQ
VIEW
RFQ
1,170
In-stock
ON Semiconductor MOSFET N-CH 500V 4.2A TO-220F UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 30W (Tc) N-Channel - 500V 4.2A (Tc) 1.75 Ohm @ 2.1A, 10V 5V @ 250µA 12nC @ 10V 485pF @ 25V 10V ±25V
FQI4N90TU
RFQ
VIEW
RFQ
2,834
In-stock
ON Semiconductor MOSFET N-CH 900V 4.2A I2PAK QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 3.13W (Ta), 140W (Tc) N-Channel - 900V 4.2A (Tc) 3.3 Ohm @ 2.1A, 10V 5V @ 250µA 30nC @ 10V 1100pF @ 25V 10V ±30V