Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NDF03N60ZG
RFQ
VIEW
RFQ
612
In-stock
ON Semiconductor MOSFET N-CH 600V 3.1A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 27W (Tc) N-Channel - 600V 3.1A (Tc) 3.6 Ohm @ 1.2A, 10V 4.5V @ 50µA 18nC @ 10V 372pF @ 25V 10V ±30V
SFU9220TU_F080
RFQ
VIEW
RFQ
2,875
In-stock
ON Semiconductor MOSFET P-CH 200V 3.1A IPAK - Obsolete Tube MOSFET (Metal Oxide) - Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 2.5W (Ta), 30W (Tc) P-Channel - 200V 3.1A (Tc) 1.5 Ohm @ 1.6A, 10V 4V @ 250µA 19nC @ 10V 540pF @ 25V 10V ±30V
SFU9220TU_AM002
RFQ
VIEW
RFQ
1,032
In-stock
ON Semiconductor MOSFET P-CH 200V 3.1A IPAK - Obsolete Tube MOSFET (Metal Oxide) - Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 2.5W (Ta), 30W (Tc) P-Channel - 200V 3.1A (Tc) 1.5 Ohm @ 1.6A, 10V 4V @ 250µA 19nC @ 10V 540pF @ 25V 10V ±30V
NDF03N60ZH
RFQ
VIEW
RFQ
1,660
In-stock
ON Semiconductor MOSFET N-CH 600V 3.1A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 27W (Tc) N-Channel - 600V 3.1A (Tc) 3.6 Ohm @ 1.2A, 10V 4.5V @ 50µA 18nC @ 10V 372pF @ 25V 10V ±30V
FQU4P25TU
RFQ
VIEW
RFQ
3,419
In-stock
ON Semiconductor MOSFET P-CH 250V 3.1A IPAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 2.5W (Ta), 45W (Tc) P-Channel - 250V 3.1A (Tc) 2.1 Ohm @ 1.55A, 10V 5V @ 250µA 14nC @ 10V 420pF @ 25V 10V ±30V