Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BFL4004-1E
RFQ
VIEW
RFQ
3,338
In-stock
ON Semiconductor MOSFET N-CH 800V 4.3A - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3FS 2W (Ta), 36W (Tc) N-Channel - 800V 4.3A (Tc) 2.5 Ohm @ 3.25A, 10V - 36nC @ 10V 710pF @ 30V 10V ±30V
RFP4N100
RFQ
VIEW
RFQ
1,988
In-stock
ON Semiconductor MOSFET N-CH 1KV 4.3A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) - Through Hole TO-220-3 TO-220AB - N-Channel - 1000V 4.3A (Tc) 3.5 Ohm @ 2.5A, 10V 4V @ 250µA 120nC @ 20V - - -
FQPF7N60
RFQ
VIEW
RFQ
3,508
In-stock
ON Semiconductor MOSFET N-CH 600V 4.3A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 48W (Tc) N-Channel - 600V 4.3A (Tc) 1 Ohm @ 2.2A, 10V 5V @ 250µA 38nC @ 10V 1430pF @ 25V 10V ±30V