Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDI9406-F085
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ON Semiconductor MOSFET N-CH 40V 110A TO262AB Automotive, AEC-Q101, PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 176W (Tj) N-Channel - 40V 110A (Tc) 2.2 mOhm @ 80A, 10V 4V @ 250µA 138nC @ 10V 7710pF @ 25V 10V ±20V
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ON Semiconductor MOSFET N-CH 80V 110A TO-220 Automotive, AEC-Q101, PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 300W (Tc) N-Channel - 80V 110A (Tc) 2.8 mOhm @ 80A, 10V 4V @ 250µA 150nC @ 10V 10000pF @ 40V 10V ±20V