Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FDP075N15A
RFQ
VIEW
RFQ
941
In-stock
ON Semiconductor MOSFET N-CH 150V 130A TO-220-3 PowerTrench® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 333W (Tc) N-Channel - 150V 130A (Tc) 7.5 mOhm @ 100A, 10V 4V @ 250µA 100nC @ 10V 7350pF @ 75V 10V ±20V
FDP075N15A-F102
RFQ
VIEW
RFQ
2,859
In-stock
ON Semiconductor MOSFET N-CH 150V 130A TO-220-3 PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 333W (Tc) N-Channel - 150V 130A (Tc) 7.5 mOhm @ 100A, 10V 4V @ 250µA 100nC @ 10V 7350pF @ 75V 10V ±20V
FDP020N06B-F102
RFQ
VIEW
RFQ
2,752
In-stock
ON Semiconductor MOSFET N-CH 60V 120A TO-220-3 PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 333W (Tc) N-Channel - 60V 120A (Tc) 2 mOhm @ 100A, 10V 4.5V @ 250µA 268nC @ 10V 20930pF @ 30V 10V ±20V
FDP036N10A
RFQ
VIEW
RFQ
1,116
In-stock
ON Semiconductor MOSFET N-CH 100V TO-220AB-3 PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 333W (Tc) N-Channel - 100V 120A (Tc) 3.6 mOhm @ 75A, 10V 4V @ 250µA 116nC @ 10V 7295pF @ 25V 10V ±20V