Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQP9N25CTSTU
RFQ
VIEW
RFQ
710
In-stock
ON Semiconductor MOSFET N-CH 250V 8.8A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 74W (Tc) N-Channel 250V 8.8A (Tc) 430 mOhm @ 4.4A, 10V 4V @ 250µA 35nC @ 10V 710pF @ 25V 10V ±30V
FQP9N25C
RFQ
VIEW
RFQ
1,203
In-stock
ON Semiconductor MOSFET N-CH 250V 8.8A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 74W (Tc) N-Channel 250V 8.8A (Tc) 430 mOhm @ 4.4A, 10V 4V @ 250µA 35nC @ 10V 710pF @ 25V 10V ±30V
NDD60N900U1-35G
RFQ
VIEW
RFQ
1,367
In-stock
ON Semiconductor MOSFET N-CH 600V 5.9A IPAK-3 - Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 74W (Tc) N-Channel 600V 5.7A (Tc) 900 mOhm @ 2.5A, 10V 4V @ 250µA 12nC @ 10V 360pF @ 50V 10V ±25V
NDD60N900U1-1G
RFQ
VIEW
RFQ
2,356
In-stock
ON Semiconductor MOSFET N-CH 600V 5.9A IPAK-4 - Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 74W (Tc) N-Channel 600V 5.7A (Tc) 900 mOhm @ 2.5A, 10V 4V @ 250µA 12nC @ 10V 360pF @ 50V 10V ±25V
IRF634B-FP001
RFQ
VIEW
RFQ
1,783
In-stock
ON Semiconductor MOSFET N-CH 250V 8.1A TO-220 - Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 74W (Tc) N-Channel 250V 8.1A (Tc) 450 mOhm @ 4.05A, 10V 4V @ 250µA 38nC @ 10V 1000pF @ 25V 10V ±30V