Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQP5N80
RFQ
VIEW
RFQ
2,565
In-stock
ON Semiconductor MOSFET N-CH 800V 4.8A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 140W (Tc) N-Channel - 800V 4.8A (Tc) 2.6 Ohm @ 2.4A, 10V 5V @ 250µA 33nC @ 10V 1250pF @ 25V 10V ±30V
FQP4N90
RFQ
VIEW
RFQ
3,646
In-stock
ON Semiconductor MOSFET N-CH 900V 4.2A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 140W (Tc) N-Channel - 900V 4.2A (Tc) 3.3 Ohm @ 2.1A, 10V 5V @ 250µA 30nC @ 10V 1100pF @ 25V 10V ±30V
FQP19N20L
RFQ
VIEW
RFQ
1,135
In-stock
ON Semiconductor MOSFET N-CH 200V 21A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 140W (Tc) N-Channel - 200V 21A (Tc) 140 mOhm @ 10.5A, 10V 2V @ 250µA 35nC @ 5V 2200pF @ 25V 5V, 10V ±20V
FQP19N20
RFQ
VIEW
RFQ
2,386
In-stock
ON Semiconductor MOSFET N-CH 200V 19.4A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 140W (Tc) N-Channel - 200V 19.4A (Tc) 150 mOhm @ 9.7A, 10V 5V @ 250µA 40nC @ 10V 1600pF @ 25V 10V ±30V
FQP4N90C
RFQ
VIEW
RFQ
3,978
In-stock
ON Semiconductor MOSFET N-CH 900V 4A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 140W (Tc) N-Channel - 900V 4A (Tc) 4.2 Ohm @ 2A, 10V 5V @ 250µA 22nC @ 10V 960pF @ 25V 10V ±30V