Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FQD19N10TM
RFQ
VIEW
RFQ
649
In-stock
ON Semiconductor MOSFET N-CH 100V 15.6A DPAK QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 50W (Tc) N-Channel - 100V 15.6A (Tc) 100 mOhm @ 7.8A, 10V 4V @ 250µA 25nC @ 10V 780pF @ 25V 10V ±25V
FQD30N06TM
RFQ
VIEW
RFQ
3,923
In-stock
ON Semiconductor MOSFET N-CH 60V 22.7A DPAK-3 QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 2.5W (Ta), 44W (Tc) N-Channel - 60V 22.7A (Tc) 45 mOhm @ 11.4A, 10V 4V @ 250µA 25nC @ 10V 945pF @ 25V 10V ±25V