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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	FQD2N90TF	RFQ VIEW	PDF RFQ	1,592 In-stock	ON Semiconductor	MOSFET N-CH 900V 1.7A DPAK		QFET®	Obsolete	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	2.5W (Ta), 50W (Tc)	N-Channel	-	900V	1.7A (Tc)	7.2 Ohm @ 850mA, 10V	5V @ 250µA	15nC @ 10V	500pF @ 25V	10V	±30V
	FQB5N90TM	RFQ VIEW	PDF RFQ	1,202 In-stock	ON Semiconductor	MOSFET N-CH 900V 5.4A D2PAK		QFET®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D²PAK (TO-263AB)	3.13W (Ta), 158W (Tc)	N-Channel	-	900V	5.4A (Tc)	2.3 Ohm @ 2.7A, 10V	5V @ 250µA	40nC @ 10V	1550pF @ 25V	10V	±30V
	FQB8N90CTM	RFQ VIEW	PDF RFQ	1,762 In-stock	ON Semiconductor	MOSFET N-CH 900V 6.3A D2PAK		QFET®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D²PAK (TO-263AB)	171W (Tc)	N-Channel	-	900V	6.3A (Tc)	1.9 Ohm @ 3.15A, 10V	5V @ 250µA	45nC @ 10V	2080pF @ 25V	10V	±30V
	FQD2N90TM	RFQ VIEW	PDF RFQ	1,325 In-stock	ON Semiconductor	MOSFET N-CH 900V 1.7A DPAK		QFET®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	2.5W (Ta), 50W (Tc)	N-Channel	-	900V	1.7A (Tc)	7.2 Ohm @ 850mA, 10V	5V @ 250µA	15nC @ 10V	500pF @ 25V	10V	±30V

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