Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQPF5N80
RFQ
VIEW
RFQ
1,488
In-stock
ON Semiconductor MOSFET N-CH 800V 2.8A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 47W (Tc) N-Channel - 800V 2.8A (Tc) 2.6 Ohm @ 1.4A, 10V 5V @ 250µA 33nC @ 10V 1250pF @ 25V 10V ±30V
FQPF4N90
RFQ
VIEW
RFQ
2,265
In-stock
ON Semiconductor MOSFET N-CH 900V 2.5A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 47W (Tc) N-Channel - 900V 2.5A (Tc) 3.3 Ohm @ 1.25A, 10V 5V @ 250µA 30nC @ 10V 1100pF @ 25V 10V ±30V
IRF620B_FP001
RFQ
VIEW
RFQ
662
In-stock
ON Semiconductor MOSFET N-CH 200V 5A TO-220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 47W (Tc) N-Channel - 200V 5A (Tc) 800 mOhm @ 2.5A, 10V 4V @ 250µA 16nC @ 10V 390pF @ 25V 10V ±30V
FQPF4N90C
RFQ
VIEW
RFQ
2,794
In-stock
ON Semiconductor MOSFET N-CH 900V 4A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 47W (Tc) N-Channel - 900V 4A (Tc) 4.2 Ohm @ 2A, 10V 5V @ 250µA 22nC @ 10V 960pF @ 25V 10V ±30V
FQPF4N90CT
RFQ
VIEW
RFQ
1,645
In-stock
ON Semiconductor MOSFET N-CH 900V 4A QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 47W (Tc) N-Channel - 900V 4A (Tc) 4.2 Ohm @ 2A, 10V 5V @ 250µA 22nC @ 10V 960pF @ 25V 10V ±30V