- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,146
In-stock
|
ON Semiconductor | MOSFET N-CH 120V 32A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 150W (Tc) | N-Channel | - | 120V | 32A (Tc) | 50 mOhm @ 16A, 10V | 4V @ 250µA | 53nC @ 10V | 1860pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,957
In-stock
|
ON Semiconductor | MOSFET N-CH 400V 10A I2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.13W (Ta), 134W (Tc) | N-Channel | - | 400V | 10A (Tc) | 540 mOhm @ 5A, 10V | 4V @ 250µA | 53nC @ 10V | 1800pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,470
In-stock
|
ON Semiconductor | MOSFET N-CH 200V 19A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 139W (Tc) | N-Channel | - | 200V | 19A (Tc) | 170 mOhm @ 9.5A, 10V | 4V @ 250µA | 53nC @ 10V | 1080pF @ 25V | 10V | ±30V |