- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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644
In-stock
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ON Semiconductor | MOSFET P-CH 100V 8A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 65W (Tc) | P-Channel | - | 100V | 8A (Tc) | 530 mOhm @ 4A, 10V | 4V @ 250µA | 15nC @ 10V | 470pF @ 25V | 10V | ±30V | |||
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VIEW |
2,276
In-stock
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ON Semiconductor | MOSFET P-CH 100V 4.5A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 40W (Tc) | P-Channel | - | 100V | 4.5A (Tc) | 1.05 Ohm @ 2.25A, 10V | 4V @ 250µA | 8.2nC @ 10V | 250pF @ 25V | 10V | ±30V |