- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,724
In-stock
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ON Semiconductor | MOSFET N-CH 500V 0.27A TO-92L | QFET® | Obsolete | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92L | 1.5W (Tc) | N-Channel | 500V | 270mA (Tc) | 9 Ohm @ 135mA, 10V | 3.7V @ 250µA | 5.5nC @ 10V | 150pF @ 25V | 10V | ±30V | |||
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VIEW |
748
In-stock
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ON Semiconductor | MOSFET N-CH 200V 1A TO-92L | - | Obsolete | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92L | 3.1W (Ta) | N-Channel | 200V | 1A (Tc) | 1.5 Ohm @ 500mA, 10V | 4V @ 250µA | 9.3nC @ 10V | 225pF @ 25V | 10V | ±30V |