Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQH70N10
RFQ
VIEW
RFQ
2,029
In-stock
ON Semiconductor MOSFET N-CH 100V 70A TO-247 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 214W (Tc) N-Channel - 100V 70A (Tc) 23 mOhm @ 35A, 10V 4V @ 250µA 110nC @ 10V 3300pF @ 25V 10V ±25V
FQPF70N10
RFQ
VIEW
RFQ
3,220
In-stock
ON Semiconductor MOSFET N-CH 100V 35A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 62W (Tc) N-Channel - 100V 35A (Tc) 23 mOhm @ 17.5A, 10V 4V @ 250µA 110nC @ 10V 3300pF @ 25V 10V ±25V
FQA70N10
RFQ
VIEW
RFQ
818
In-stock
ON Semiconductor MOSFET N-CH 100V 70A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 214W (Tc) N-Channel - 100V 70A (Tc) 23 mOhm @ 35A, 10V 4V @ 250µA 110nC @ 10V 3300pF @ 25V 10V ±25V
FQP70N10
RFQ
VIEW
RFQ
793
In-stock
ON Semiconductor MOSFET N-CH 100V 57A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 160W (Tc) N-Channel - 100V 57A (Tc) 23 mOhm @ 28.5A, 10V 4V @ 250µA 110nC @ 10V 3300pF @ 25V 10V ±25V