Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQI8P10TU
RFQ
VIEW
RFQ
644
In-stock
ON Semiconductor MOSFET P-CH 100V 8A I2PAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 3.75W (Ta), 65W (Tc) P-Channel - 100V 8A (Tc) 530 mOhm @ 4A, 10V 4V @ 250µA 15nC @ 10V 470pF @ 25V 10V ±30V
FQPF8P10
RFQ
VIEW
RFQ
1,223
In-stock
ON Semiconductor MOSFET P-CH 100V 5.3A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 28W (Tc) P-Channel - 100V 5.3A (Tc) 530 mOhm @ 2.65A, 10V 4V @ 250µA 15nC @ 10V 470pF @ 25V 10V ±30V
IRFU120_R4941
RFQ
VIEW
RFQ
3,976
In-stock
ON Semiconductor MOSFET N-CH 100V 8.4A I-PAK - Obsolete Tube MOSFET (Metal Oxide) - Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA - N-Channel - 100V 8.4A (Tc) 270 mOhm @ 5.9A, 10V 4V @ 250µA 15nC @ 10V 350pF @ 25V - -
IRFR120_R4941
RFQ
VIEW
RFQ
1,944
In-stock
ON Semiconductor MOSFET N-CH 100V 8.4A TO-252AA - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252AA 50W (Tc) N-Channel - 100V 8.4A (Tc) 270 mOhm @ 5.9A, 10V 4V @ 250µA 15nC @ 10V 350pF @ 25V 10V ±20V
FQU8P10TU
RFQ
VIEW
RFQ
3,250
In-stock
ON Semiconductor MOSFET P-CH 100V 6.6A IPAK QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 2.5W (Ta), 44W (Tc) P-Channel - 100V 6.6A (Tc) 530 mOhm @ 3.3A, 10V 4V @ 250µA 15nC @ 10V 470pF @ 25V 10V ±30V
FQP8P10
RFQ
VIEW
RFQ
3,526
In-stock
ON Semiconductor MOSFET P-CH 100V 8A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 65W (Tc) P-Channel - 100V 8A (Tc) 530 mOhm @ 4A, 10V 4V @ 250µA 15nC @ 10V 470pF @ 25V 10V ±30V