Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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ON Semiconductor MOSFET N-CH 100V 60A TO220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 214W (Tc) N-Channel - 100V 60A (Ta) 30 mOhm @ 26A, 10V 4V @ 250µA 135nC @ 10V 3150pF @ 25V 10V ±20V
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ON Semiconductor MOSFET N-CH 100V 60A TO220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 214W (Tc) N-Channel - 100V 60A (Ta) 30 mOhm @ 26A, 10V 4V @ 250µA 135nC @ 10V 3150pF @ 25V 10V ±20V
FQA70N10
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ON Semiconductor MOSFET N-CH 100V 70A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 214W (Tc) N-Channel - 100V 70A (Tc) 23 mOhm @ 35A, 10V 4V @ 250µA 110nC @ 10V 3300pF @ 25V 10V ±25V