Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
MMFT2N02ELT1
RFQ
VIEW
RFQ
2,264
In-stock
ON Semiconductor MOSFET N-CH 20V 1.6A SOT223 - Obsolete Digi-Reel® MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 800mW (Ta) N-Channel - 20V 1.6A (Ta) 150 mOhm @ 800mA, 5V 2V @ 1mA 20nC @ 5V 580pF @ 15V 5V ±15V
NTF6P02T3G
RFQ
VIEW
RFQ
1,522
In-stock
ON Semiconductor MOSFET P-CH 20V 10A SOT223 Automotive, AEC-Q101 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 8.3W (Ta) P-Channel - 20V 10A (Ta) 50 mOhm @ 6A, 4.5V 1V @ 250µA 20nC @ 4.5V 1200pF @ 16V 2.5V, 4.5V ±8V
NTF6P02T3G
RFQ
VIEW
RFQ
3,034
In-stock
ON Semiconductor MOSFET P-CH 20V 10A SOT223 Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 8.3W (Ta) P-Channel - 20V 10A (Ta) 50 mOhm @ 6A, 4.5V 1V @ 250µA 20nC @ 4.5V 1200pF @ 16V 2.5V, 4.5V ±8V
NTF6P02T3G
RFQ
VIEW
RFQ
3,747
In-stock
ON Semiconductor MOSFET P-CH 20V 10A SOT223 Automotive, AEC-Q101 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 8.3W (Ta) P-Channel - 20V 10A (Ta) 50 mOhm @ 6A, 4.5V 1V @ 250µA 20nC @ 4.5V 1200pF @ 16V 2.5V, 4.5V ±8V