Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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ON Semiconductor FET ENGR DEV-NOT REL PowerTrench® Active - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 2.4W (Ta), 37.5W (Tc) N-Channel 100V 128A (Tc) 4.5 mOhm @ 100A, 10V 4V @ 310µA 68nC @ 10V 5065pF @ 50V 10V ±20V
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ON Semiconductor MOSFET N-CH 600V 10A TO-220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 39W (Tc) N-Channel 600V 10A (Tc) 750 mOhm @ 5A, 10V 4.5V @ 100µA 68nC @ 10V 1645pF @ 25V 10V ±30V