Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PHB73N06T,118
RFQ
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RFQ
1,046
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NXP USA Inc. MOSFET N-CH 60V 73A D2PAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 166W (Tc) N-Channel - 60V 73A (Tc) 14 mOhm @ 25A, 10V 4V @ 1mA 54nC @ 10V 2464pF @ 25V 10V ±20V
PHD3055E,118
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RFQ
2,006
In-stock
NXP USA Inc. MOSFET N-CH 60V 10.3A DPAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 33W (Tc) N-Channel - 60V 10.3A (Tc) 150 mOhm @ 5.5A, 10V 4V @ 1mA 5.8nC @ 10V 250pF @ 25V 10V ±20V