- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,438
In-stock
|
NXP USA Inc. | MOSFET N-CH 200V 5.2A TO220F | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 25W (Tc) | N-Channel | - | 200V | 5.2A (Tc) | 400 mOhm @ 4.5A, 10V | 4V @ 1mA | 24nC @ 10V | 959pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
602
In-stock
|
NXP USA Inc. | MOSFET N-CH 200V 8.2A TO220F | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 30W (Tc) | N-Channel | - | 200V | 8.2A (Tc) | 180 mOhm @ 8A, 10V | 4V @ 1mA | 40nC @ 10V | 1850pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,563
In-stock
|
NXP USA Inc. | MOSFET N-CH 200V 7.6A TO220F | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 30W (Tc) | N-Channel | - | 200V | 7.6A (Tc) | 230 mOhm @ 7A, 10V | 4V @ 1mA | 38nC @ 10V | 1500pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,461
In-stock
|
NXP USA Inc. | MOSFET N-CH 200V 50A SOT429 | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 300W (Tc) | N-Channel | - | 200V | 50A (Tc) | 40 mOhm @ 25A, 10V | 4V @ 1mA | 183nC @ 10V | 9530pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,938
In-stock
|
NXP USA Inc. | MOSFET N-CH 200V 14A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | - | 200V | 14A (Tc) | 230 mOhm @ 7A, 10V | 4V @ 1mA | 38nC @ 10V | 1500pF @ 25V | 10V | ±20V | |||
,TO-226_straightlead.jpg)
|
VIEW |
2,751
In-stock
|
NXP USA Inc. | MOSFET N-CH 200V 300MA SOT54 | - | Obsolete | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta) | N-Channel | - | 200V | 300mA (Ta) | 5 Ohm @ 100mA, 2.8V | 1.8V @ 1mA | - | 120pF @ 25V | 2.8V | ±20V | |||
|
|
VIEW |
1,415
In-stock
|
NXP USA Inc. | MOSFET N-CH 200V 300MA SOT54 | - | Obsolete | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta) | N-Channel | - | 200V | 300mA (Ta) | 5 Ohm @ 100mA, 2.8V | 1.8V @ 1mA | - | 120pF @ 25V | 2.8V | ±20V | |||
|
|
VIEW |
3,274
In-stock
|
NXP USA Inc. | MOSFET N-CH 200V 16A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 136W (Tc) | N-Channel | - | 200V | 16A (Tc) | 180 mOhm @ 8A, 10V | 4V @ 1mA | 63nC @ 10V | 1850pF @ 25V | 10V | ±20V | |||
