Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BUK98180-100A,115
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RFQ
2,812
In-stock
NXP USA Inc. MOSFET N-CH 100V 4.6A SOT-223 Automotive, AEC-Q101, TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 8W (Tc) N-Channel 100V 4.6A (Tc) 173 mOhm @ 5A, 10V 2V @ 1mA - 619pF @ 25V 4.5V, 10V ±10V
BUK9875-100A,115
RFQ
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RFQ
3,368
In-stock
NXP USA Inc. MOSFET N-CH 100V 7A SOT-223 Automotive, AEC-Q101, TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 8W (Tc) N-Channel 100V 7A (Tc) 72 mOhm @ 8A, 10V 2V @ 1mA - 1690pF @ 25V 4.5V, 10V ±10V
PMT760EN,135
RFQ
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RFQ
1,238
In-stock
NXP USA Inc. MOSFET N-CH 100V SC-73 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 800mW (Ta), 6.2W (Tc) N-Channel 100V 900mA (Ta) 950 mOhm @ 800mA, 10V 2.5V @ 250µA 3nC @ 10V 160pF @ 80V 4.5V, 10V ±20V
PMT200EN,135
RFQ
VIEW
RFQ
3,273
In-stock
NXP USA Inc. MOSFET N-CH 100V 1.8A SC-73 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 800mW (Ta), 8.3W (Tc) N-Channel 100V 1.8A (Ta) 235 mOhm @ 1.5A, 10V 2.5V @ 250µA 10nC @ 10V 475pF @ 80V 4.5V, 10V ±20V
PSMN035-100LS,115
RFQ
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RFQ
2,268
In-stock
NXP USA Inc. MOSFET N-CH QFN3333 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-DFN3333 (3.3x3.3) 65W (Tc) N-Channel 100V 27A (Tc) 32 mOhm @ 10A, 10V 4V @ 1mA 23nC @ 10V 1350pF @ 50V 10V ±20V