- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
3,945
In-stock
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Nexperia USA Inc. | MOSFET N-CHANNEL 30V 5.7A 6TSOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP | 530mW (Ta), 4.46W (Tc) | N-Channel | 30V | 5.7A (Ta) | 38 mOhm @ 4.5A, 10V | 2V @ 250µA | 11nC @ 10V | 294pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,031
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 30V 3.2A 3DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 400mW (Ta), 8.33W (Tc) | N-Channel | 30V | 3.2A (Ta) | 67 mOhm @ 3.2A, 10V | 2.5V @ 250µA | 11nC @ 10V | 295pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,763
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 80V 22A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 56W (Tc) | N-Channel | 80V | 22A (Tc) | 46 mOhm @ 10A, 10V | 4V @ 1mA | 11nC @ 10V | 633pF @ 12V | 10V | ±20V | |||
|
|
VIEW |
1,407
In-stock
|
Nexperia USA Inc. | MOSFET P-CH 30V 2.4A 3DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 400mW (Ta), 8.3W (Tc) | P-Channel | 30V | 2.4A (Ta) | 120 mOhm @ 2.4A, 10V | 2.5V @ 250µA | 11nC @ 10V | 309pF @ 15V | 4.5V, 10V | ±20V | |||
