Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
PSMN017-80BS,118
RFQ
VIEW
RFQ
3,997
In-stock
Nexperia USA Inc. MOSFET N-CH 80V 50A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 103W (Tc) N-Channel 80V 50A (Tc) 17 mOhm @ 10A, 10V 4V @ 1mA 26nC @ 10V 1573pF @ 40V 10V ±20V
PSMN015-60BS,118
RFQ
VIEW
RFQ
3,551
In-stock
Nexperia USA Inc. MOSFET N-CH 60V 50A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 86W (Tc) N-Channel 60V 50A (Tc) 14.8 mOhm @ 15A, 10V 4V @ 1mA 20.9nC @ 10V 1220pF @ 30V 10V ±20V
PSMN9R8-30MLC,115
RFQ
VIEW
RFQ
1,785
In-stock
Nexperia USA Inc. MOSFET N-CH 30V 50A LFPAK33 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SOT-1210, 8-LFPAK33 (5-Lead) LFPAK33 45W (Tc) N-Channel 30V 50A (Tc) 9.8 mOhm @ 15A, 10V 1.95V @ 1mA 10.9nC @ 10V 690pF @ 15V 4.5V, 10V ±20V