Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PSMN013-100ES,127
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VIEW
RFQ
3,568
In-stock
Nexperia USA Inc. MOSFET N-CH 100V I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 170W (Tc) N-Channel 100V 68A (Tc) 13.9 mOhm @ 15A, 10V 4V @ 1mA 59nC @ 10V 3195pF @ 50V 10V ±20V
BUK7E5R2-100E,127
RFQ
VIEW
RFQ
3,406
In-stock
Nexperia USA Inc. MOSFET N-CH 100V 120A I2PAK Automotive, AEC-Q101, TrenchMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 349W (Tc) N-Channel 100V 120A (Tc) 5.2 mOhm @ 25A, 10V 4V @ 1mA 180nC @ 10V 11810pF @ 25V 10V ±20V
PSMN7R0-100ES,127
RFQ
VIEW
RFQ
1,000
In-stock
Nexperia USA Inc. MOSFET N-CH 100V I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 269W (Tc) N-Channel 100V 100A (Tc) 6.8 mOhm @ 15A, 10V 4V @ 1mA 125nC @ 10V 6686pF @ 50V 10V ±20V
PSMN8R5-100ESQ
RFQ
VIEW
RFQ
3,953
In-stock
Nexperia USA Inc. MOSFET N-CH 100V 100A I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 263W (Tc) N-Channel 100V 100A (Tj) 8.5 mOhm @ 25A, 10V 4V @ 1mA 111nC @ 10V 5512pF @ 50V 10V ±20V
PSMN5R0-100ES,127
RFQ
VIEW
RFQ
2,986
In-stock
Nexperia USA Inc. MOSFET N-CH 100V 120A I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 338W (Tc) N-Channel 100V 120A (Tc) 5 mOhm @ 25A, 10V 4V @ 1mA 170nC @ 10V 9900pF @ 50V 10V ±20V