Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PSMN070-200P,127
RFQ
VIEW
RFQ
2,859
In-stock
Nexperia USA Inc. MOSFET N-CH 200V 35A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 250W (Tc) N-Channel - 200V 35A (Tc) 70 mOhm @ 17A, 10V 4V @ 1mA 77nC @ 10V 4570pF @ 25V 10V ±20V
PSMN057-200P,127
RFQ
VIEW
RFQ
993
In-stock
Nexperia USA Inc. MOSFET N-CH 200V 39A TO220AB TrenchMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 250W (Tc) N-Channel - 200V 39A (Tc) 57 mOhm @ 17A, 10V 4V @ 1mA 96nC @ 10V 3750pF @ 25V 10V ±20V
PHP33NQ20T,127
RFQ
VIEW
RFQ
1,575
In-stock
Nexperia USA Inc. MOSFET N-CH 200V 32.7A TO220AB TrenchMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 200V 32.7A (Tc) 77 mOhm @ 15A, 10V 4V @ 1mA 32.2nC @ 10V 1870pF @ 25V 10V ±20V
PHP9NQ20T,127
RFQ
VIEW
RFQ
1,102
In-stock
Nexperia USA Inc. MOSFET N-CH 200V 8.7A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 88W (Tc) N-Channel - 200V 8.7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA 24nC @ 10V 959pF @ 25V 10V ±30V
PHP20NQ20T,127
RFQ
VIEW
RFQ
1,242
In-stock
Nexperia USA Inc. MOSFET N-CH 200V 20A TO220AB TrenchMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) N-Channel - 200V 20A (Tc) 130 mOhm @ 10A, 10V 4V @ 1mA 65nC @ 10V 2470pF @ 25V 10V ±20V