Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
PHK12NQ03LT,518
RFQ
VIEW
RFQ
990
In-stock
Nexperia USA Inc. MOSFET N-CH 30V 11.8A SOT96 TrenchMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V - 10.5 mOhm @ 12A, 10V 2V @ 250µA 17.6nC @ 5V 1335pF @ 16V 4.5V, 10V ±20V
PHK13N03LT,518
RFQ
VIEW
RFQ
1,365
In-stock
Nexperia USA Inc. MOSFET N-CH 30V 13.8A 8-SOIC TrenchMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 6.25W (Tc) N-Channel - 30V 13.8A (Tc) 20 mOhm @ 8A, 10V 2V @ 250µA 10.7nC @ 5V 752pF @ 15V 4.5V, 10V ±20V