Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
PMZ760SN,315
RFQ
VIEW
RFQ
2,537
In-stock
Nexperia USA Inc. MOSFET N-CH 60V 1.22A SOT883 TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-101, SOT-883 DFN1006-3 2.5W (Tc) N-Channel - 60V 1.22A (Tc) 900 mOhm @ 300mA, 10V 3V @ 250µA 1.05nC @ 10V 23pF @ 30V 4.5V, 10V ±20V
PMK30EP,518
RFQ
VIEW
RFQ
1,862
In-stock
Nexperia USA Inc. MOSFET P-CH 30V 14.9A 8-SOIC TrenchMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 6.9W (Tc) P-Channel - 30V 14.9A (Tc) 19 mOhm @ 9.2A, 10V 3V @ 250µA 50nC @ 10V 2240pF @ 25V 10V ±20V