Supplier Device Package :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Microsemi Corporation MOSFET N-CH 400V TO-205AF TO-39 - Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-205AF Metal Can TO-39 800mW (Ta), 25W (Tc) N-Channel 400V 3A (Tc) 1 Ohm @ 2A, 10V 4V @ 250µA 5.75nC @ 10V - 10V ±20V
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Microsemi Corporation MOSFET N-CH Military, MIL-PRF-19500/557 Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-205AF Metal Can TO-205AF (TO-39) 800mW (Ta), 25W (Tc) N-Channel 400V 3A (Tc) 1.1 Ohm @ 3A, 10V 4V @ 250µA 34.75nC @ 10V - 10V ±20V
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Microsemi Corporation MOSFET N-CH TO-205AF TO-39 Military, MIL-PRF-19500/557 Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-205AF Metal Can TO-39 800mW (Ta), 25W (Tc) N-Channel 400V 3A (Tc) 1.1 Ohm @ 3A, 10V 4V @ 250µA 34.75nC @ 10V - 10V ±20V