Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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APT30N60KC6
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2,259
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Microsemi Corporation MOSFET N-CH 600V 30A TO-220 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 [K] 219W (Tc) N-Channel - 600V 30A (Tc) 125 mOhm @ 14.5A, 10V 3.5V @ 960µA 88nC @ 10V 2267pF @ 25V - -
APT31N60BCSG
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3,459
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Microsemi Corporation MOSFET N-CH 600V 31A TO-247 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 255W (Tc) N-Channel - 600V 31A (Tc) 100 mOhm @ 18A, 10V 3.9V @ 1.2mA 85nC @ 10V 3055pF @ 25V 10V ±30V
APT20N60BC3G
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3,310
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Microsemi Corporation MOSFET N-CH 600V 20.7A TO-247 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 208W (Tc) N-Channel - 600V 20.7A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 114nC @ 10V 2440pF @ 25V 10V ±20V
APT17N80BC3G
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2,101
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Microsemi Corporation MOSFET N-CH 800V 17A TO-247 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 208W (Tc) N-Channel - 800V 17A (Tc) 290 mOhm @ 11A, 10V 3.9V @ 1mA 90nC @ 10V 2250pF @ 25V 10V ±20V
APT11N80KC3G
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2,236
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Microsemi Corporation MOSFET N-CH 800V 11A TO-220 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 [K] 156W (Tc) N-Channel - 800V 11A (Tc) 450 mOhm @ 7.1A, 10V 3.9V @ 680µA 60nC @ 10V 1585pF @ 25V 10V ±20V