Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
2,802
In-stock
Microsemi Corporation MOSFET N-CH 600V 18A TO247AD POWER MOS IV® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD 310W (Tc) N-Channel 600V 18A (Tc) 400 mOhm @ 9A, 10V 4V @ 1mA 130nC @ 10V 2950pF @ 25V 10V ±30V
Default Photo
RFQ
VIEW
RFQ
3,035
In-stock
Microsemi Corporation MOSFET N-CH 600V 18A TO247AD POWER MOS IV® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD 310W (Tc) N-Channel 600V 18A (Tc) 400 mOhm @ 9A, 10V 4V @ 1mA 130nC @ 10V 2950pF @ 25V 10V ±30V
APT12067B2LLG
RFQ
VIEW
RFQ
1,160
In-stock
Microsemi Corporation MOSFET N-CH 1200V 18A T-MAX POWER MOS 7® Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 565W (Tc) N-Channel 1200V 18A (Tc) 670 mOhm @ 9A, 10V 5V @ 2.5mA 150nC @ 10V 4420pF @ 25V 10V ±30V
APT17F80S
RFQ
VIEW
RFQ
1,109
In-stock
Microsemi Corporation MOSFET N-CH 800V 18A D3PAK POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA D3Pak 500W (Tc) N-Channel 800V 18A (Tc) 580 mOhm @ 9A, 10V 5V @ 1mA 122nC @ 10V 3757pF @ 25V 10V ±30V
APT17F80B
RFQ
VIEW
RFQ
697
In-stock
Microsemi Corporation MOSFET N-CH 800V 18A TO-247 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 500W (Tc) N-Channel 800V 18A (Tc) 580 mOhm @ 9A, 10V 5V @ 1mA 122nC @ 10V 3757pF @ 25V 10V ±30V
APL1001J
RFQ
VIEW
RFQ
679
In-stock
Microsemi Corporation MOSFET N-CH 1000V 18A SOT-227 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 520W (Tc) N-Channel 1000V 18A (Tc) 600 mOhm @ 500mA, 10V 4V @ 2.5mA - 7200pF @ 25V 10V ±30V
APT12067B2FLLG
RFQ
VIEW
RFQ
3,998
In-stock
Microsemi Corporation MOSFET N-CH 1200V 18A T-MAX POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 565W (Tc) N-Channel 1200V 18A (Tc) 670 mOhm @ 9A, 10V 5V @ 2.5mA 150nC @ 10V 4420pF @ 25V 10V ±30V
APT17F120J
RFQ
VIEW
RFQ
3,371
In-stock
Microsemi Corporation MOSFET N-CH 1200V 18A SOT-227 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 545W (Tc) N-Channel 1200V 18A (Tc) 580 mOhm @ 14A, 10V 5V @ 2.5mA 300nC @ 10V 9670pF @ 25V 10V ±30V
APT18M100B
RFQ
VIEW
RFQ
1,086
In-stock
Microsemi Corporation MOSFET N-CH 1000V 18A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 625W (Tc) N-Channel 1000V 18A (Tc) 700 mOhm @ 9A, 10V 5V @ 1mA 150nC @ 10V 4845pF @ 25V 10V ±30V