Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TN2106N3-G
RFQ
VIEW
RFQ
618
In-stock
Microchip Technology MOSFET N-CH 60V 300MA TO92-3 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92-3 740mW (Tc) N-Channel 60V 300mA (Tj) 2.5 Ohm @ 500mA, 10V 2V @ 1mA 50pF @ 25V 4.5V, 10V ±20V
VN2106N3-G
RFQ
VIEW
RFQ
1,424
In-stock
Microchip Technology MOSFET N-CH 60V 300MA TO92-3 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92-3 1W (Tc) N-Channel 60V 300mA (Tj) 4 Ohm @ 500mA, 10V 2.4V @ 1mA 50pF @ 25V 5V, 10V ±20V