Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI3420A-TP
RFQ
VIEW
RFQ
2,839
In-stock
Micro Commercial Co P-CHANNEL,MOSFETS,SOT-23 PACKAGE - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 1.25W N-Channel 20V 6A 28 mOhm @ 5A, 4.5V 1V @ 250µA 12nC @ 10V 515pF @ 10V 2.5V, 4.5V ±10V
SI2312-TP
RFQ
VIEW
RFQ
3,813
In-stock
Micro Commercial Co N-CHANNEL MOSFET, SOT-23 PACKAGE - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 350mW (Ta) N-Channel 20V 5A (Ta) 41 mOhm @ 4.3A, 1.8V 1V @ 250µA - 865pF @ 10V 4.5V ±8V
SI3415-TP
RFQ
VIEW
RFQ
1,868
In-stock
Micro Commercial Co MOSFET P-CH 20V 4A SOT-23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 350mW (Ta) P-Channel 20V 4A (Ta) 50 mOhm @ 4A, 4.5V 1V @ 250µA 17.2nC @ 4.5V 1450pF @ 10V 1.8V, 4.5V ±8V