- Series :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,163
In-stock
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IXYS | MOSFET N-CH 1000V 32A PLUS247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 1250W (Tc) | N-Channel | - | 1000V | 32A (Tc) | 320 mOhm @ 16A, 10V | 6.5V @ 8mA | 195nC @ 10V | 9940pF @ 25V | 10V | ±30V | |||
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VIEW |
1,889
In-stock
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IXYS | MOSFET N-CH 1000V 32A TO-264 | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | 960W (Tc) | N-Channel | - | 1000V | 32A (Tc) | 320 mOhm @ 16A, 10V | 6.5V @ 1mA | 225nC @ 10V | 14200pF @ 25V | 10V | ±30V | |||
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VIEW |
3,404
In-stock
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IXYS | MOSFET N-CH 1000V 32A TO-264 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | 1250W (Tc) | N-Channel | - | 1000V | 32A (Tc) | 320 mOhm @ 16A, 10V | 6.5V @ 8mA | 195nC @ 10V | 9940pF @ 25V | 10V | ±30V | |||
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VIEW |
2,493
In-stock
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IXYS | MOSFET N-CH 1000V 32A PLUS247 | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 960W (Tc) | N-Channel | - | 1000V | 32A (Tc) | 320 mOhm @ 16A, 10V | 6.5V @ 1mA | 225nC @ 10V | 14200pF @ 25V | 10V | ±30V |