Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH102N20T
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1,617
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IXYS MOSFET N-CH 200V 102A TO-247 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 750W (Tc) N-Channel 200V 102A (Tc) 23 mOhm @ 500mA, 10V 4.5V @ 1mA 114nC @ 10V 6800pF @ 25V 10V ±30V
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1,347
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IXYS MOSFET N-CH 200V 102A PLUS220 TrenchHV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3, Short Tab PLUS220 750W (Tc) N-Channel 200V 102A (Tc) 23 mOhm @ 500mA, 10V 4.5V @ 1mA 114nC @ 10V 6800pF @ 25V 10V ±30V
IXTK102N65X2
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3,725
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IXYS MOSFET N-CH 650V 102A X2 TO-264 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXTK) 1040W (Tc) N-Channel 650V 102A (Tc) 30 mOhm @ 51A, 10V 5V @ 250µA 152nC @ 10V 10900pF @ 25V 10V ±30V
IXTX102N65X2
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2,413
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IXYS MOSFET N-CH 650V 102A X2 PLUS247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1040W (Tc) N-Channel 650V 102A (Tc) 30 mOhm @ 51A, 10V 5V @ 250µA 152nC @ 10V 10900pF @ 25V 10V ±30V