Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFP30N60X
RFQ
VIEW
RFQ
2,316
In-stock
IXYS MOSFET N-CH 600V 30A TO220 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 500W (Tc) N-Channel - 600V 30A (Tc) 155 mOhm @ 15A, 10V 4.5V @ 4mA 56nC @ 10V 2270pF @ 25V 10V ±30V
IXTP32N65X
RFQ
VIEW
RFQ
3,088
In-stock
IXYS MOSFET N-CH 650V 32A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 500W (Tc) N-Channel - 650V 32A (Tc) 135 mOhm @ 16A, 10V 5.5V @ 250µA 54nC @ 10V 2205pF @ 25V 10V ±30V
IXFP26N50P3
RFQ
VIEW
RFQ
2,357
In-stock
IXYS MOSFET N-CH 500V 26A TO-220 HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 500W (Tc) N-Channel - 500V 26A (Tc) 230 mOhm @ 13A, 10V 5V @ 4mA 42nC @ 10V 2220pF @ 25V 10V ±30V
IXFP22N60P3
RFQ
VIEW
RFQ
2,181
In-stock
IXYS MOSFET N-CH 600V 22A TO220AB HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 500W (Tc) N-Channel - 600V 22A (Tc) 360 mOhm @ 11A, 10V 5V @ 1.5mA 38nC @ 10V 2600pF @ 25V 10V ±30V