Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXYS MOSFET N-CH 100V 110A PLUS220-S PolarHT™ HiPerFET™ Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount PLUS-220SMD PLUS-220SMD 480W (Tc) N-Channel - 100V 110A (Tc) 15 mOhm @ 500mA, 10V 5V @ 4mA 110nC @ 10V 3550pF @ 25V 10V ±20V
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2,332
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IXYS MOSFET N-CH 100V 110A PLUS220 PolarHT™ HiPerFET™ Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3, Short Tab PLUS220 480W (Tc) N-Channel - 100V 110A (Tc) 15 mOhm @ 500mA, 10V 5V @ 4mA 110nC @ 10V 3550pF @ 25V 10V ±20V
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691
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IXYS MOSFET N-CH 100V 60A ISOPLUS220 HiPerFET™, PolarHT™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole ISOPLUS220™ ISOPLUS220™ 120W (Tc) N-Channel - 100V 60A (Tc) 17 mOhm @ 55A, 10V 5V @ 4mA 110nC @ 10V 3550pF @ 25V 10V ±20V
IXTT110N10P
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1,642
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IXYS MOSFET N-CH 100V 110A TO-268 PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 480W (Tc) N-Channel - 100V 110A (Tc) 15 mOhm @ 500mA, 10V 5V @ 250µA 110nC @ 10V 3550pF @ 25V 10V ±20V
IXFH110N10P
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1,184
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IXYS MOSFET N-CH 100V 110A TO-247 PolarHT™ HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 480W (Tc) N-Channel - 100V 110A (Tc) 15 mOhm @ 500mA, 10V 5V @ 4mA 110nC @ 10V 3550pF @ 25V 10V ±20V
IXTQ110N10P
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1,219
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IXYS MOSFET N-CH 100V 110A TO-3P PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 480W (Tc) N-Channel - 100V 110A (Tc) 15 mOhm @ 500mA, 10V 5V @ 250µA 110nC @ 10V 3550pF @ 25V 10V ±20V