Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTQ62N15P
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3,281
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IXYS MOSFET N-CH 150V 62A TO-3P PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 350W (Tc) N-Channel 150V 62A (Tc) 40 mOhm @ 31A, 10V 5.5V @ 250µA 70nC @ 10V 2250pF @ 25V 10V ±20V
IXTA62N15P
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RFQ
671
In-stock
IXYS MOSFET N-CH 150V 62A TO-263 PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 350W (Tc) N-Channel 150V 62A (Tc) 40 mOhm @ 31A, 10V 5.5V @ 250µA 70nC @ 10V 2250pF @ 25V 10V ±20V
IXTP62N15P
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RFQ
2,896
In-stock
IXYS MOSFET N-CH 150V 62A TO-220 PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 350W (Tc) N-Channel 150V 62A (Tc) 40 mOhm @ 31A, 10V 5.5V @ 250µA 70nC @ 10V 2250pF @ 25V 10V ±20V
IXTB62N50L
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RFQ
1,221
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IXYS MOSFET N-CH 500V 62A PLUS264 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 800W (Tc) N-Channel 500V 62A (Tc) 100 mOhm @ 31A, 20V 5.5V @ 250µA 550nC @ 20V 11500pF @ 25V 20V ±30V