Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTP2N80P
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RFQ
3,136
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IXYS MOSFET N-CH 800V 2A TO-220 PolarHV™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 70W (Tc) N-Channel - 800V 2A (Tc) 6 Ohm @ 1A, 10V 5.5V @ 50µA 10.6nC @ 10V 440pF @ 25V 10V ±30V
IXTP2N100
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RFQ
3,380
In-stock
IXYS MOSFET N-CH 1000V 2A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 1000V 2A (Tc) 7 Ohm @ 1A, 10V 4.5V @ 250µA 40nC @ 10V 825pF @ 25V 10V ±20V
IXTP2N80
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RFQ
1,238
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IXYS MOSFET N-CH 800V 2A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 54W (Tc) N-Channel - 800V 2A (Tc) 6.2 Ohm @ 500mA, 10V 5.5V @ 250µA 22nC @ 10V 440pF @ 25V 10V ±20V
IXTP2N100P
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RFQ
3,655
In-stock
IXYS MOSFET N-CH 1000V 2A TO-220 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 86W (Tc) N-Channel - 1000V 2A (Tc) 7.5 Ohm @ 500mA, 10V 4.5V @ 100µA 24.3nC @ 10V 655pF @ 25V 10V ±20V
IXTP2N60P
RFQ
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RFQ
3,056
In-stock
IXYS MOSFET N-CH 600V 2A TO-220 Polar™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 55W (Tc) N-Channel - 600V 2A (Tc) 5.1 Ohm @ 1A, 10V 5V @ 250µA 7nC @ 10V 240pF @ 25V 10V ±30V