Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXTR210P10T
RFQ
VIEW
RFQ
1,831
In-stock
IXYS MOSFET P-CH 100V 158A ISOPLUS247 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 ISOPLUS247™ 595W (Tc) P-Channel - 100V 195A (Tc) 8 mOhm @ 105A, 10V 4.5V @ 250µA 740nC @ 10V 69500pF @ 25V 10V ±15V
IXTH140P10T
RFQ
VIEW
RFQ
2,557
In-stock
IXYS MOSFET P-CH 100V 140A TO-247 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 568W (Tc) P-Channel - 100V 140A (Tc) 12 mOhm @ 70A, 10V 4V @ 250µA 400nC @ 10V 31400pF @ 25V 10V ±15V
IXTH76P10T
RFQ
VIEW
RFQ
1,653
In-stock
IXYS MOSFET P-CH 100V 76A TO-247 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 298W (Tc) P-Channel - 100V 76A (Tc) 25 mOhm @ 500mA, 10V 4V @ 250µA 197nC @ 10V 13700pF @ 25V 10V ±15V
IXTX210P10T
RFQ
VIEW
RFQ
3,327
In-stock
IXYS MOSFET P-CH 100V 210A PLUS247 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1040W (Tc) P-Channel - 100V 210A (Tc) 7.5 mOhm @ 105A, 10V 4.5V @ 250µA 740nC @ 10V 69500pF @ 25V 10V ±15V
IXTR140P10T
RFQ
VIEW
RFQ
1,430
In-stock
IXYS MOSFET P-CH 100V 90A ISOPLUS247 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 ISOPLUS247™ 270W (Tc) P-Channel - 100V 110A (Tc) 13 mOhm @ 70A, 10V 4V @ 250µA 400nC @ 10V 31400pF @ 25V 10V ±15V